Free excitonic transitions in GaN, grown by metalorganic chemicalvapor deposition
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منابع مشابه
Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence
Spatially, spectrally, and temporally resolved cathodoluminescence ~CL! techniques have been employed to examine the optical properties and kinetics of carrier relaxation for metalorganic chemical vapor deposition grown InGaN/GaN single quantum wells ~QWs!. Cathodoluminescence wavelength imaging of the QW sample revealed local band gap variations, indicating the presence of local In composition...
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We have examined in detail the optical properties of InGaN quantum wells ~QWs! grown on pyramidal GaN mesas prepared by lateral epitaxial overgrowth ~LEO! in a metalorganic chemical vapor deposition system that resulted in QWs on $1-101% facets. The effects of In migration during growth on the resulting QW thickness and composition were examined with transmission electron microscopy ~TEM! and v...
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تاریخ انتشار 2014